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  absolute maximum ratings t case = 25c unless otherwise stated 2N4033CSM4 prelim. 02/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v ceo collector ? emitter voltage v cbo collector ? base voltage v ebo emitter ? base voltage i c continuous collector current p d total device dissipation at t a = 25c derate above 25c t stg operating and storage temperature range -80v -80v -5v -1a 400mw 2.28 mw/c ?55 to +200c mechanical data dimensions in mm (inches) 1 2 3 4 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 0.64 0.08 (0.025 0.003) high speed pnp medium voltage transistor in a ceramic surface mount package features ? ceramic surface mount hermetic package  low weight  small footprint  screening options available lcc3 package underside view pad 1 ? collector pad 2 ? n/c pa d 3 ? emitter pad 4 ? base
parameter test conditions min. typ. max. unit v cb = -60v v eb = -5v i c = -150ma i b = -15ma i c = -500ma i b = -50ma i c = -150ma i b = -15ma i c = -500ma v ce = -0.5v 1 i c = -10ma i c = -10 m a i e = -10 m a i c = -100ma v ce = -5.0v @-55 c 1 i c = -100 m av ce = -5.0v i c = -100ma v ce = -5.0v 1 i c = -500ma v ce = -5.0v 1 i c = -1.0a v ce = -5.0v 1 v ce = -10v f = 1mhz v eb = -0.5v f = 1mhz i c = -50ma v ce = -10v f = 100mhz i c = -500ma i b1 =-i b2 = -50ma -50 -50 -10 -0.15 0.50 -0.9 -1.1 -80 -80 -5.0 40 75 100 300 70 25 20 110 1.5 5.0 100 50 350 i cbo i ebo v ce(sat) v be(sat) v be(on) v (br)ceo v (br)cbo v (br)ebo h fe c obo c ibo h fe t on t f t s na m a m a v v v v v v ? pf ? ns 2N4033CSM4 prelim. 02/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk collector cut off current emitter cut off current collector emitter saturation voltage 1 base emitter saturation voltage 1 base emitter on voltage collector emitter breakdown voltage collector base breakdown voltage emitter base breakdown voltage dc current gain output capacitance input capacitance small signal gain turn on time fall time storage time electrical characteristics (t case = 25 c unless otherwise stated) small signal characteristics switching characteristics 1 pulse test t p = 300 m s , d = 1% t a = 150 c


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